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savantic semiconductor product specification silicon npn power transistors 2SC1683 d escription with to-220c package complement to type 2sa843 high breakdown voltage large collector power dissipation applications audio frequency power amplifier color tv vertical deflection output pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 200 v v ceo collector-emitter voltage open base 150 v v ebo emitter-base voltage open collector 5 v i c collector current 500 ma i cm collector current-peak 2 a p t total power dissipation t c =25 20 w t j junction temperature 150 t stg storage temperature -50~150
savantic semiconductor product specification 2 silicon npn power transistors 2SC1683 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =5ma ; i b =0 150 v v (br)cbo collector-base breakdown voltage i c =0.5ma ; i e =0 200 v v (br)ebo emitter-base breakdown voltage i e =0.5ma ; i c =0 5 v v cesat collector-emitter saturation voltage i c =500ma; i b =50ma 1.0 v v be base-emitter on voltage i c =400m a ; v ce =10v 1.0 v i cbo collector cut-off current v cb =200v ;i e =0 50 a i ebo emitter cut-off current v eb =4v; i c =0 50 a h fe dc current gain i c =400m a ; v ce =10v 60 200 h fe classifications p q 60-140 85-200
savantic semiconductor product specification 3 silicon npn power transistors 2SC1683 package outline fig.2 outline dimensions (unindicated tolerance:0.10 mm)

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